Fiches de cours

Modelling micro-/nano- field effect electron devices

MICRO-623

Lecturer(s) :

Sallese Jean-Michel

Language:

English

Frequency

Every 2 years

Remark

Next time: Spring 2022

Summary

The course provides an in depth modeling of emerging field effect transistors in CMOS technologty. Starting from the basis, the course will gardually introduce essential aspects to end up with a rigorous description of key features, Nanowire FET & its application to biosensing will also be analyzed.

Content

Basics of MOSFETs

Alternative modeling of MOSFETs

Short Channel effects in MOS transistors.

Modelling the Double Gate FET.

Charge based Modelling of the DG FET.

Quantum Confinement in DG FET.

The Gate All Around nanowire FET.

Concepts of Equivalent Parameters in MUGFET.

Charge based modelling of the Junction Less FET.

Concept of Ballistic Transport in nanoscaled transistors.

A simple picture of transport in `molecules'

The High Electron Mobility Transistor (HEMT)

Bio-Sensor nanowires

Keywords

multigate FET, FinFET, junctionless FET, nanowires, bio-sensors, ballistic, HEMT

Learning Prerequisites

Recommended courses

Basic course in maths, physics

In the programs

Reference week

 
      Lecture
      Exercise, TP
      Project, other

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  • Autumn semester
  • Winter sessions
  • Spring semester
  • Summer sessions
  • Lecture in French
  • Lecture in English
  • Lecture in German