Coursebooks

Modelling micro-/nano- field effect electron devices

MICRO-623

Lecturer(s) :

Sallese Jean-Michel

Language:

English

Frequency

Every 2 years

Remarque

Next time in June 2020

Summary

The course provides an in depth modeling of emerging field effect transistors in CMOS technologty. Starting from the basis, the course will gardually introduce essential aspects to end up with a rigorous description of key features, Nanowire FET & its application to biosensing will also be analyzed.

Content

Basics of MOSFETs

Alternative modeling of MOSFETs

Short Channel effects in MOS transistors.

Modelling the Double Gate FET.

Charge based Modelling of the DG FET.

Quantum Confinement in DG FET.

The Gate All Around nanowire FET.

Concepts of Equivalent Parameters in MUGFET.

Charge based modelling of the Junction Less FET.

Concept of Ballistic Transport in nanoscaled transistors.

Is the ballistic FET a vacuum tube ? .

The contact resistance in nano devices

A simple picture of transport in `molecules¿

FET and Bio-Sensors

Keywords

multigate MOSFET, junctionless FET, nanowires, bio-sensors, ballistic transport

Learning Prerequisites

Recommended courses

Basic course in maths, physics

In the programs

  • Microsystems and Microelectronics (edoc), 2019-2020
    • Semester
    • Exam form
      Written
    • Credits
      1
    • Subject examined
      Modelling micro-/nano- field effect electron devices
    • Number of places
      20
    • Lecture
      14 Hour(s)

Reference week

Lecture
Exercise, TP
Project, other

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  • Autumn semester
  • Winter sessions
  • Spring semester
  • Summer sessions
  • Lecture in French
  • Lecture in English
  • Lecture in German