Modelling micro-/nano- field effect electron devices
MICRO-623 / 1 credit
Teacher: Sallese Jean-Michel
Language: English
Remark: Postponed until further notice
Frequency
Every 2 years
Summary
The course provides an in depth modeling of emerging field effect transistors in CMOS technologty. Starting from the basis, the course will gardually introduce essential aspects to end up with a rigorous description of key features, Nanowire FET & its application to biosensing will also be analyzed.
Content
Basics of MOSFETs
Alternative modeling of MOSFETs
Short Channel effects in MOS transistors.
Modelling the Double Gate FET.
Charge based Modelling of the DG FET.
Quantum Confinement in DG FET.
The Gate All Around nanowire FET.
Concepts of Equivalent Parameters in MUGFET.
Charge based modelling of the Junction Less FET.
Concept of Ballistic Transport in nanoscaled transistors.
A simple picture of transport in ‘molecules’
The High Electron Mobility Transistor (HEMT)
Bio-Sensor nanowires
Keywords
multigate FET, FinFET, junctionless FET, nanowires, bio-sensors, ballistic, HEMT
Learning Prerequisites
Recommended courses
Basic course in maths, physics
In the programs
- Number of places: 20
- Exam form: Written (session free)
- Subject examined: Modelling micro-/nano- field effect electron devices
- Lecture: 14 Hour(s)
- Type: optional