MICRO-623 / 1 credit

Teacher: Sallese Jean-Michel

Language: English

Remark: Postponed until further notice


Every 2 years


The course provides an in depth modeling of emerging field effect transistors in CMOS technologty. Starting from the basis, the course will gardually introduce essential aspects to end up with a rigorous description of key features, Nanowire FET & its application to biosensing will also be analyzed.


Basics of MOSFETs

Alternative modeling of MOSFETs

Short Channel effects in MOS transistors.

Modelling the Double Gate FET.

Charge based Modelling of the DG FET.

Quantum Confinement in DG FET.

The Gate All Around nanowire FET.

Concepts of Equivalent Parameters in MUGFET.

Charge based modelling of the Junction Less FET.

Concept of Ballistic Transport in nanoscaled transistors.

A simple picture of transport in ‘molecules’

The High Electron Mobility Transistor (HEMT)

Bio-Sensor nanowires


multigate FET, FinFET, junctionless FET, nanowires, bio-sensors, ballistic, HEMT

Learning Prerequisites

Recommended courses

Basic course in maths, physics


Moodle Link

In the programs

  • Number of places: 20
  • Exam form: Written (session free)
  • Subject examined: Modelling micro-/nano- field effect electron devices
  • Lecture: 14 Hour(s)
  • Type: optional

Reference week

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