Coursebooks

Modelling micro-/nano- field effect electron devices

MICRO-623

Lecturer(s) :

Sallese Jean-Michel

Language:

English

Frequency

Every 2 years

Remarque

from 10:15 to 12:00 on: Monday 15 June Wednesday 17 June Friday 19 June Monday 22 June Wednesday 24 June Friday 26 June Monday 29 June

Summary

The course provides an in depth modeling of emerging field effect transistors in CMOS technologty. Starting from the basis, the course will gardually introduce essential aspects to end up with a rigorous description of key features, Nanowire FET & its application to biosensing will also be analyzed.

Content

These on-line lectures will present and discuss physics-based analytical models for some families of field effect transistor devices in advanced CMOS technology.


Requisite: basics of electrostatics and semiconductor physics.

Course dates: (each time from 10h15 to 12h00)

COURSE TOPICS:

Keywords

multigate MOSFET, junctionless FET, nanowires, bio-sensors, ballistic transport

Learning Prerequisites

Recommended courses

basics of electrostatics and semiconductor physics.

In the programs

  • Microsystems and Microelectronics (edoc), 2019-2020
    • Semester
    • Exam form
      Written
    • Credits
      1
    • Subject examined
      Modelling micro-/nano- field effect electron devices
    • Number of places
      20
    • Lecture
      14 Hour(s)

Reference week

Lecture
Exercise, TP
Project, other

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  • Autumn semester
  • Winter sessions
  • Spring semester
  • Summer sessions
  • Lecture in French
  • Lecture in English
  • Lecture in German