Semiconductor devices II
Summary
Students will learn about understanding the fundamentals and applications of emerging nanoscale devices, materials and concepts. Remark: at least 5 students should be enrolled for the course to be given
Content
- Advanced nm-channel CMOS devices (FinFET, UTB SOI, 2D materials, 3D integration, LiM)
- Steep slope devices, energy efficiency (Tunnel FETs, negative-capacitance devices)
- Neuromorphic devices and circuit architectures
- 2D materials – introduction and materials aspects
- FETs with 2D materials – switching, contact resistance, trap states
- Optoelectronics with 2D materials
- Emerging, post-CMOS concepts: valleytronics, spintronics, excitonic devices
Keywords
Nanoelectronics, nanodevices, 2D materials, CMOS and post-CMOS concepts
Learning Prerequisites
Required courses
Semiconductor devices I
General Physics 4
Dans les plans d'études
- Semestre: Printemps
- Forme de l'examen: Ecrit (session d'été)
- Matière examinée: Semiconductor devices II
- Cours: 2 Heure(s) hebdo x 14 semaines
- Exercices: 2 Heure(s) hebdo x 14 semaines
- Semestre: Printemps
- Forme de l'examen: Ecrit (session d'été)
- Matière examinée: Semiconductor devices II
- Cours: 2 Heure(s) hebdo x 14 semaines
- Exercices: 2 Heure(s) hebdo x 14 semaines
- Semestre: Printemps
- Forme de l'examen: Ecrit (session d'été)
- Matière examinée: Semiconductor devices II
- Cours: 2 Heure(s) hebdo x 14 semaines
- Exercices: 2 Heure(s) hebdo x 14 semaines
- Semestre: Printemps
- Forme de l'examen: Ecrit (session d'été)
- Matière examinée: Semiconductor devices II
- Cours: 2 Heure(s) hebdo x 14 semaines
- Exercices: 2 Heure(s) hebdo x 14 semaines
- Semestre: Printemps
- Forme de l'examen: Ecrit (session d'été)
- Matière examinée: Semiconductor devices II
- Cours: 2 Heure(s) hebdo x 14 semaines
- Exercices: 2 Heure(s) hebdo x 14 semaines