Introduction to Metalorganic Vapour Phase Epitaxy of III-V semiconductors
PHYS-747 / 1 crédit
Enseignant(s): Caroff-Gaonac'h Philippe, Dwir Benjamin, Grandjean Nicolas, Moselund Kirsten Emilie, Rudra Alok
Langue: Anglais
Remark: Next time: Spring
Frequency
Every year
Summary
This course offers an insight into the science of epitaxial growth, a chapter of surface science requiring basic understanding of thermodynamics, crystallography, electronic and optical properties of semiconductors.
Content
Metalorganic Vapour Phase Epitaxy (MOVPE) is one of the main fabrication techniques of a large variety of widely studied semiconductor materials of key relevance for modern optoelectronic devices, for which this course illustrates the challenges, methods and achievements.
The course will cover the following chapters:
1) Overview and introduction
- a) Scientific & technical importance
- b) Historical perspectives
- c) Place among epitaxial techniques
2) Instrumentation
- a) System architecture
- b) Hazards and safe lab design
- c) Lab visit
3) Growth process
- a) Main growth regimes
- b) Choice of precursors
- c) Influence of carrier gases
4) Surfaces & growth modes
- a) Surface characterization
- b) Vicinal surfaces
- c) Surface dynamics
- d) Surface segregation
- e) Surfactant mediated epitaxy
5) Masked selective area epitaxy
- a) Facet growth behavior
- b) Alloy content modulation
- c) Epitaxial lateral overgrowth
- d) Template assisted selective area epitaxy
6) Non-planar selective area epitaxy
- a) Self-limited growth behaviour
- b) Quantum wires and quantum dot arrays
7) Epitaxy of III-nitride semiconductors
- a) GaN heteroepitaxy
- b) InGaN & InAlN alloys
- c) Doping issues
Note
Also by Zoom:
https://epfl.zoom.us/s/7997015211#success
Keywords
Surfaces, epitaxy, semiconductors, surfactants, nanostructures
Resources
Bibliography
"Organometallic Vapor-Phase Epitaxy: theory and practice", Academic Press, 2nd Ed., 1999 - G.B. Stringfellow
Ressources en bibliothèque
Moodle Link
Dans les plans d'études
- Nombre de places: 15
- Forme de l'examen: Oral (session libre)
- Matière examinée: Introduction to Metalorganic Vapour Phase Epitaxy of III-V semiconductors
- Cours: 15 Heure(s)
- Type: optionnel