Coursebooks

Semiconductor devices II

EE-567

Lecturer(s) :

Ionescu Mihai Adrian
Kis Andras

Language:

English

Summary

Students will learn about understanding the fundamentals and applications of emerging nanoscale devices, materials and concepts. Remark: at least 5 students should be enrolled for the course to be given

Content

  1. Advanced nm-channel CMOS devices (FinFET, UTB SOI, 2D materials, 3D integration, LiM)
  2. Steep slope devices, energy efficiency (Tunnel FETs, negative-capacitance devices)
  3. Neuromorphic devices and circuit architectures
  4. 2D materials ' introduction and materials aspects
  5. FETs with 2D materials ' switching, contact resistance, trap states
  6. Optoelectronics with 2D materials
  7. Emerging, post-CMOS concepts: valleytronics, spintronics, excitonic devices

 

Keywords

Nanoelectronics, nanodevices, 2D materials, CMOS and post-CMOS concepts

Learning Prerequisites

Required courses

Semiconductor devices I

General Physics 4

In the programs

Reference week

 MoTuWeThFr
8-9     
9-10     
10-11     
11-12     
12-13     
13-14BC02
CM1110
    
14-15    
15-16BC02
CM1110
    
16-17    
17-18     
18-19     
19-20     
20-21     
21-22     
 
      Lecture
      Exercise, TP
      Project, other

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  • Autumn semester
  • Winter sessions
  • Spring semester
  • Summer sessions
  • Lecture in French
  • Lecture in English
  • Lecture in German