Semiconductor devices II
Summary
Students will learn about understanding the fundamentals and applications of emerging nanoscale devices, materials and concepts. Remark: at least 5 students should be enrolled for the course to be given
Content
- Advanced nm-channel CMOS devices (FinFET, UTB SOI, 2D materials, 3D integration, LiM)
- Steep slope devices, energy efficiency (Tunnel FETs, negative-capacitance devices)
- Neuromorphic devices and circuit architectures
- 2D materials – introduction and materials aspects
- FETs with 2D materials – switching, contact resistance, trap states
- Optoelectronics with 2D materials
- Emerging, post-CMOS concepts: valleytronics, spintronics, excitonic devices
Keywords
Nanoelectronics, nanodevices, 2D materials, CMOS and post-CMOS concepts
Learning Prerequisites
Required courses
Semiconductor devices I
General Physics 4
In the programs
- Semester: Spring
- Exam form: Written (summer session)
- Subject examined: Semiconductor devices II
- Lecture: 2 Hour(s) per week x 14 weeks
- Exercises: 2 Hour(s) per week x 14 weeks
- Semester: Spring
- Exam form: Written (summer session)
- Subject examined: Semiconductor devices II
- Lecture: 2 Hour(s) per week x 14 weeks
- Exercises: 2 Hour(s) per week x 14 weeks
- Semester: Spring
- Exam form: Written (summer session)
- Subject examined: Semiconductor devices II
- Lecture: 2 Hour(s) per week x 14 weeks
- Exercises: 2 Hour(s) per week x 14 weeks
- Semester: Spring
- Exam form: Written (summer session)
- Subject examined: Semiconductor devices II
- Lecture: 2 Hour(s) per week x 14 weeks
- Exercises: 2 Hour(s) per week x 14 weeks
- Semester: Spring
- Exam form: Written (summer session)
- Subject examined: Semiconductor devices II
- Lecture: 2 Hour(s) per week x 14 weeks
- Exercises: 2 Hour(s) per week x 14 weeks