Coursebooks

Semiconductor devices II

EE-567

Lecturer(s) :

Ionescu Mihai Adrian
Kis Andras

Language:

English

Summary

Students will learn about understanding the fundamentals and applications of emerging nanoscale devices, materials and concepts. Remark: at least 5 students should be enrolled for the course to be given

Content

  1. Advanced nm-channel CMOS devices (FinFET, UTB SOI, 2D materials, 3D integration, LiM)
  2. Steep slope devices, energy efficiency (Tunnel FETs, negative-capacitance devices)
  3. Neuromorphic devices and circuit architectures
  4. 2D materials ¿ introduction and materials aspects
  5. FETs with 2D materials ¿ switching, contact resistance, trap states
  6. Optoelectronics with 2D materials
  7. Emerging, post-CMOS concepts: valleytronics, spintronics, excitonic devices

Keywords

Nanoelectronics, nanodevices, 2D materials, CMOS and post-CMOS concepts

Learning Prerequisites

Required courses

Semiconductor devices I

General Physics 4

In the programs

  • Electrical and Electronics Engineering, 2019-2020, Master semester 2
    • Semester
      Spring
    • Exam form
      Written
    • Credits
      4
    • Subject examined
      Semiconductor devices II
    • Lecture
      2 Hour(s) per week x 14 weeks
    • Exercises
      2 Hour(s) per week x 14 weeks
  • Electrical and Electronics Engineering, 2019-2020, Master semester 4
    • Semester
      Spring
    • Exam form
      Written
    • Credits
      4
    • Subject examined
      Semiconductor devices II
    • Lecture
      2 Hour(s) per week x 14 weeks
    • Exercises
      2 Hour(s) per week x 14 weeks

Reference week

MoTuWeThFr
8-9
9-10
10-11
11-12
12-13
13-14
14-15
15-16
16-17
17-18
18-19
19-20
20-21
21-22
Under construction
Lecture
Exercise, TP
Project, other

legend

  • Autumn semester
  • Winter sessions
  • Spring semester
  • Summer sessions
  • Lecture in French
  • Lecture in English
  • Lecture in German