Advanced lll-Nitride Semiconductor Devices
EE-627 / 3 credits
Teacher(s): Grandjean Nicolas, Matioli Elison de Nazareth
Language: English
Remark: Students are required to have taken semiconductor classes (EE-557, PHYS-433 or an equivalent) / Next time: Spring 2025
Frequency
Every 2 years
Summary
This course covers advanced topics on compound semiconductors (lll-Nitrides) and their heterostructures, from both physics and engineering perspectives, to explain the principles of some of the widespread electronic and optoelectronic devices used in our lives (LEDs, lasers, HEMTS, and power FETS).
Content
1. lntroduction
2. Background physics: From crystal to band structure
3. Heterojunctions/heterostructures: Brief introduction to band alignment, Quantum Wells, Quantum Dots.
4. Case of lll-Nitride semiconductors: Polarization fields
5. Epitaxial Growth: how these structures are grown in practice
6.Optoelectronic devices
7. Advanced device concepts: recent advances in the literature in GaN optoelectronics (state of the art, micro LEDs, deep UV LEDs' long
wavelength LEDs, VCSELS etc..)
8. Electronic Devices
9. Radio frequency devices
10. Power devices: lateral and vertical power devices
11. Advanced device concepts: recent advances in the literature in GaN electronics
Keywords
lll-Nitrides, compound semiconductors, heterostructures, LEDs, laserdiodes, HEMTS, RF and powertransistors.
Learning Prerequisites
Required courses
Students are required to have taken semiconductor classes (EE-557, PHYS-433, or an equivalent semiconductor class).
Learning Outcomes
By the end of the course, the student must be able to:
- Recognize the band structure of compound semiconductors and heterostructures and its connection to advanced optoelectronic and electronic devices
Resources
Notes/Handbook
Papers and books will be offered during the class.
Moodle Link
In the programs
- Exam form: Oral presentation (session free)
- Subject examined: Advanced lll-Nitride Semiconductor Devices
- Lecture: 28 Hour(s)
- Exercises: 14 Hour(s)
- Type: optional
- Exam form: Oral presentation (session free)
- Subject examined: Advanced lll-Nitride Semiconductor Devices
- Lecture: 28 Hour(s)
- Exercises: 14 Hour(s)
- Type: mandatory
- Exam form: Oral presentation (session free)
- Subject examined: Advanced lll-Nitride Semiconductor Devices
- Lecture: 28 Hour(s)
- Exercises: 14 Hour(s)
- Type: optional