Fiches de cours 2017-2018

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Nanoelectronics

EE-535

Enseignant(s) :

Ionescu Mihai Adrian

Langue:

English

Summary

This lecture overviews and discusses the last trends in the technology and principles of nanoelectronic devices for more aggressive scaling, better performances, added functionalities and lower energy per function. The opportunities of these advances compared to industrial roadmaps are analized.

Content

(1) Ultimate CMOS technologies and their showstoppers

 

(2) Phenomena specific to deep submicron devices: non-stationary phenomena (velocity overshoot), ballistic transport, quantum effects, atomic scale parameter fluctuation (fluctuation of number of dopants, interface roughness).

 

(3) Innovative device architectures (Double-gate MOS transistor - DGMOS, dynamic threshold MOS transistor - DTMOS, gate-all-around transistor - GAA, vertical MOS transistors)

 

(4) Nano-scale and quantum devices: Single Electron Transistor (SET), quantum wires, few-electron memories, etc.

 

(5) Steep slope switches: Tunnel FEts, NEM  switch and Negative Capacitance switch.

 

(6) Charge-based circuit architectures: quantum dot cellular automata (QCA)

 

(7) Carbon Nanotubes: technology, devices and circuits

 

(8) Spintronics

Learning Prerequisites

Recommended courses

Basic electronics

Teaching methods

Ex cathedra

Assessment methods

Written

Dans les plans d'études

Semaine de référence

 LuMaMeJeVe
8-9     
9-10     
10-11     
11-12     
12-13     
13-14     
14-15     
15-16ELA2    
16-17    
17-18     
18-19     
19-20     
20-21     
21-22     
 
      Cours
      Exercice, TP
      Projet, autre

légende

  • Semestre d'automne
  • Session d'hiver
  • Semestre de printemps
  • Session d'été
  • Cours en français
  • Cours en anglais
  • Cours en allemand