MICRO-623 / 1 crédit

Enseignant: Sallese Jean-Michel

Langue: Anglais

Remark: October-November 2024


Frequency

Every 2 years

Summary

The course provides an in depth modeling of emerging field effect transistors in CMOS technologty. Starting from the basis, the course will gardually introduce essential aspects to end up with a rigorous description of key features, Nanowire FET & its application to biosensing will also be analyzed.

Content

Basics of MOSFETs

Alternative modeling of MOSFETs

Short Channel effects in MOS transistors.

Modelling the Double Gate FET.

Charge based Modelling of the DG FET.

Quantum Confinement in DG FET.

The Gate All Around nanowire FET.

Concepts of Equivalent Parameters in MUGFET.

Charge based modelling of the Junction Less FET.

Concept of Ballistic Transport in nanoscaled transistors.

A simple picture of transport in ‘molecules’

The High Electron Mobility Transistor (HEMT)

Bio-Sensor nanowires

Keywords

multigate FET, FinFET, junctionless FET, nanowires, bio-sensors, ballistic, HEMT

Learning Prerequisites

Recommended courses

Basic course in maths, physics

Resources

Moodle Link

Dans les plans d'études

  • Nombre de places: 20
  • Forme de l'examen: Ecrit (session libre)
  • Matière examinée: Modelling micro-/nano- field effect electron devices
  • Cours: 14 Heure(s)
  • Type: optionnel

Semaine de référence

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