Fiches de cours 2017-2018

PDF
 

Modelling micro-/nano- field effect electron devices

MICRO-623

Lecturer(s) :

Sallese Jean-Michel

Language:

English

Frequency

Every 2 years

Remarque

Next time in Spring 2018

Summary

The course provides an in depth modeling of emerging field effect transistors in CMOS technologty. Starting from the basis, the course will gardually introduce essential aspects to end up with a rigorous description of key features, Nanowire FET & its application to biosensing will also be analyzed.

Content

A) Bulk MOSFETs
I) The concept of inversion charge linearization
II) Transcapacitances and charge partitionning
III) Short channel effects

B) Multigate inversion mode MOSFETs
I) Electrostatics in double gate architectures
II) Quantum confinement corrections in DG FETs
III) Modelling cylindrical inversion mode MOSFETs
IV) Modeling arbitrary geometries MOSFETs

C) Junction-Less FETs (depletion-accumulation mode FETs)
I) Electrostatics in JL Double Gate junction less FET architectures
II) Modeling the nanowire JL FET
III) JL nanowires for bio-sensors (including surface/interface traps)

D) Transport at the nano-scale
I) Introduction to quantum conductance
II) Conceptual modeling of a 'molecular FET'
III) Basics of ballistic transport

Keywords

multigate MOSFET, junctionless FET, nanowires, bio-sensors, ballistic transport

Learning Prerequisites

Recommended courses

Basic course in maths, physics

In the programs

Reference week

 
      Lecture
      Exercise, TP
      Project, other

legend

  • Autumn semester
  • Winter sessions
  • Spring semester
  • Summer sessions
  • Lecture in French
  • Lecture in English
  • Lecture in German