Coursebooks 2017-2018

PDF
 

Nanoelectronics

EE-535

Lecturer(s) :

Ionescu Mihai Adrian

Language:

English

Summary

This lecture overviews and discusses the last trends in the technology and principles of nanoelectronic devices for more aggressive scaling, better performances, added functionalities and lower energy per function. The opportunities of these advances compared to industrial roadmaps are analized.

Content

(1) Ultimate CMOS technologies and their showstoppers

 

(2) Phenomena specific to deep submicron devices: non-stationary phenomena (velocity overshoot), ballistic transport, quantum effects, atomic scale parameter fluctuation (fluctuation of number of dopants, interface roughness).

 

(3) Innovative device architectures (Double-gate MOS transistor - DGMOS, dynamic threshold MOS transistor - DTMOS, gate-all-around transistor - GAA, vertical MOS transistors)

 

(4) Nano-scale and quantum devices: Single Electron Transistor (SET), quantum wires, few-electron memories, etc.

 

(5) Steep slope switches: Tunnel FEts, NEM  switch and Negative Capacitance switch.

 

(6) Charge-based circuit architectures: quantum dot cellular automata (QCA)

 

(7) Carbon Nanotubes: technology, devices and circuits

 

(8) Spintronics

Learning Prerequisites

Recommended courses

Basic electronics

Teaching methods

Ex cathedra

Assessment methods

Written

In the programs

Reference week

 MoTuWeThFr
8-9     
9-10     
10-11     
11-12     
12-13     
13-14     
14-15     
15-16ELA2    
16-17    
17-18     
18-19     
19-20     
20-21     
21-22     
 
      Lecture
      Exercise, TP
      Project, other

legend

  • Autumn semester
  • Winter sessions
  • Spring semester
  • Summer sessions
  • Lecture in French
  • Lecture in English
  • Lecture in German